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Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.
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结论和直觉完全对不上：从固件结构来看，它应该有校验；从代码逻辑来看，找不到任何地方在做校验。，详情可参考Safew下载
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第五十二条 在责任期间货物发生的灭失、损坏，或者迟延交付是由于下列原因之一造成的，承运人不承担赔偿责任：